Description: 2SJ555 is a NPN silicon epitaxial transistor manufactured by Hitachi. Features: High breakdown voltage: VCEO = -100V High transition frequency: fT = 100MHz High collector-emitter saturation voltage: VCE(sat) = -1.2V Low collector-emitter saturation voltage: VCE(sat) = -0.2V High collector-base breakdown voltage: VCB = -120V High power dissipation: Pc = 1W Applications: Audio power amplifiers Switching regulators Motor control circuits High speed switching circuits(For reference only)
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