Description: 4Mbit (512K x 8) CMOS Flash Memory Features: Low Voltage Operation: 2.7V to 3.6V Fast Programming Time: 10μs per Byte High Reliability: 10,000 Program/Erase Cycles Low Power Consumption: Active Current: 20mA (Typ.) Endurance: 10,000 Program/Erase Cycles Data Retention: 100 Years Package: 32-pin DIP Applications: Automotive Electronics Industrial Control Consumer Electronics Telecommunications Computer Peripherals(For reference only)
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